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Downsizing of High-Endurance and Long-Retention Pt/CaySr1−yBi2Ta2O9/(HfO2)x(Al2O3)1−x/Si FeFETs

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Ferroelectric-Gate Field Effect Transistor Memories

Part of the book series: Topics in Applied Physics ((TAP,volume 131))

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Abstract

Downsizing process of Pt/CaySr1−yBi2Ta2O9/(HfO2)x(Al2O3)1−x/Si ferroelectric-gate field-effect transistors (FeFETs) were reviewed. Self-aligned-gate process was applied for developing the FeFETs. We measured memory windows, endurances, and retentions of the self-aligned-gate FeFETs carefully in order to confirm that they showed as good quality as the conventional non-self-aligned-gate FeFETs using the same materials and thicknesses in the gate stacks. In this work, high-quality FeFETs with metal gate lengths from sub-micron to 100 nm were introduced with measured evidences of the high endurances over 108 cycles and the long stable retentions for at least 105 s.

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Acknowledgements

The authors thank Dr. Le Van Hai and the other staffs for their diligent working.

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Authors and Affiliations

  1. National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, 305-8568, Japan

    Mitsue Takahashi & Shigeki Sakai

Authors
  1. Mitsue Takahashi
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  2. Shigeki Sakai
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Corresponding author

Correspondence to Mitsue Takahashi .

Editor information

Editors and Affiliations

  1. School of Electrical and Computer Engineering, University of Seoul, Seoul, Korea (Republic of)

    Byung-Eun Park

  2. Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama, Japan

    Hiroshi Ishiwara

  3. Graduate School of Engineering Science, Osaka University, Osaka, Japan

    Masanori Okuyama

  4. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan

    Shigeki Sakai

  5. Advanced Materials Engineering for Information and Electronics, Kyunghee University, Yongin, Korea (Republic of)

    Sung-Min Yoon

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Takahashi, M., Sakai, S. (2020). Downsizing of High-Endurance and Long-Retention Pt/CaySr1−yBi2Ta2O9/(HfO2)x(Al2O3)1−x/Si FeFETs. In: Park, BE., Ishiwara, H., Okuyama, M., Sakai, S., Yoon, SM. (eds) Ferroelectric-Gate Field Effect Transistor Memories. Topics in Applied Physics, vol 131. Springer, Singapore. https://doi.org/10.1007/978-981-15-1212-4_3

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