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Electronic structure and optical properties of amorphous semiconductors

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Festkörperprobleme 12

Part of the book series: Advances in Solid State Physics ((ASSP,volume 12))

Abstract

The theory of the electronic density of states and the optical absorption of structurally disordered solids is briefly reviewed. Two complementary descriptions of the problem are considered: The tight binding approach allows for the evaluation of the general properties of the electronic spectrum. The nearly free electron approximation yields a method for calculating the electronic properties of real amorphous systems. The structure dependence of the electronic density of states and the optical absorption spectrum of covalent bonded semiconductors is investigated. Results are presented for tetrahedrally bonded semiconductors and the chain structures selenium and tellurium. A comparison between the results of different theoretical approaches and experimental data is performed.

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  1. Institut für Physik der Universität Dortmund, Dortmund, Deutschland

    Bernhard Kramer

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  1. Bernhard Kramer
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O. Madelung

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© 1972 Friedr. Vieweg & Sohn GmbH

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Kramer, B. (1972). Electronic structure and optical properties of amorphous semiconductors. In: Madelung, O. (eds) Festkörperprobleme 12. Advances in Solid State Physics, vol 12. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107701

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  • DOI: https://doi.org/10.1007/BFb0107701

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  • Print ISBN: 978-3-528-08018-1

  • Online ISBN: 978-3-540-75329-2

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