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Relaxation processes of hot holes in germanium and GaAs studied by picosecond infrared spectroscopy

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Festkörperprobleme 32

Part of the book series: Advances in Solid State Physics ((ASSP,volume 32))

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Abstract

Relaxation processes of holes in p-type Ge and GaAs are investigated with picosecond infrared pulses in the wavelength range from 0.8 to 12 μm. The transient inter-valence band absorption of Ge studied in spectrally and temporally resolved measurements reveals subpicosecond carrier-carrier and inter-valence band scattering of the excited holes, followed by the picosecond cooling of hot heavy holes via emission of optical phonons. Photogenerated non-equilibrium split-off holes give rise to a short-lived population inversion between the split-off and the light hole band, resulting in a transient gain around 260 meV. In p-type GaAs, ultrafast recombination of holes with shallow acceptors is directly observed for the first time. Carrier capture occurs on a time scale of several tens of picoseconds, following a non-exponential kinetics. Emission of longitudinal-optical phonons by free holes is found to be the dominant mechanism of recombination, directly populating the acceptor ground state.

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Authors and Affiliations

  1. Physik Department E 11, Technische Universität München, James-Franck-Str., D-8046, Garching, Germany

    Thomas Elsaesser, Andrea Lohner & Michael Woerner

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  1. Thomas Elsaesser
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  2. Andrea Lohner
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  3. Michael Woerner
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© 1992 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Elsaesser, T., Lohner, A., Woerner, M. (1992). Relaxation processes of hot holes in germanium and GaAs studied by picosecond infrared spectroscopy. In: Festkörperprobleme 32. Advances in Solid State Physics, vol 32. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0108625

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  • DOI: https://doi.org/10.1007/BFb0108625

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-528-08040-2

  • Online ISBN: 978-3-540-75341-4

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