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Electronic Si/SiGe devices: Basics, technology, performance

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Festkörperprobleme 32

Part of the book series: Advances in Solid State Physics ((ASSP,volume 32))

Abstract

Heterostructure devices composed of Si, Si1−x Gex or Ge layers will broaden the spectrum of the well established Si-microelectronics. Attractive goals are advanced device performances, enlarged design flexibilities, novel types of devices and multifunctional monolithic integrated circuits. Basic aspects of the epitaxial layer composition and the device technology are reported here. Si/SiGe hetero bipolar transistors (HBTs) and Si/SiGe modulation doped field effect transistors (MODFETs) will be described in more detail. Those have demonstrated just in the last year extremely promising room temperature and 77K performances (e.g. MODFET transconductances above 500 mS/mm, HBT cut off frequencies above 40 GHz). As a promising future application a complementary arrangement of a n- and a p-channel MODFET (named CMOD) will be presented.

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  1. Daimler-Benz AG, Forschungsinstitut Ulm, Wilhelm-Runge-Straße 11, D-7900, Ulm

    Ulf König

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  1. Ulf König
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© 1992 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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König, U. (1992). Electronic Si/SiGe devices: Basics, technology, performance. In: Festkörperprobleme 32. Advances in Solid State Physics, vol 32. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0108629

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  • DOI: https://doi.org/10.1007/BFb0108629

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-528-08040-2

  • Online ISBN: 978-3-540-75341-4

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