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Narrow-Bandgap II–VI Semiconductors: Growth

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Springer Handbook of Electronic and Photonic Materials

Part of the book series: Springer Handbooks ((SHB))

Abstract

The field of narrow-bandgap II–VI semiconductors is dominated by the compound Hg1−x Cd x Te (CMT), although some Hg-based alternatives to this ternary have been suggested. The fact that CMT is still the preeminent infrared (IR) material stems, in part, from the fact that the material can be made to cover all IR regions of interest by varying the x value. In addition, the direct band transitions in this material result in large absorption coefficients, allowing quantum efficiencies to approach 100%. Long minority carrier lifetimes result in low thermal noise, allowing high-performance detectors to be made at the highest operating temperatures reported for infrared detectors of comparable wavelengths. This chapter covers the growth of CMT by various bulk growth techniques (used mainly for first-generation infrared detectors), by liquid phase epitaxy (used mainly for second-generation infrared detectors), and by metalorganic vapor phase and molecular beam epitaxies (used mainly for third-generation infrared detectors, including two-color and hyperspectral detectors). Growth on silicon substrates is also discussed.

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Abbreviations

ACRT:

accelerated crucible rotation technique

CRA:

cast recrystallize anneal

DAG:

direct alloy growth

DET:

diethyl telluride

DIPTe:

diisopropyltellurium

DLHJ:

double-layer heterojunction

DMCd:

dimethyl cadmium

EPD:

etch pit density

FPA:

focal plane arrays

FTIR:

Fourier transform infrared

FWHM:

full-width at half-maximum

IMP:

interdiffused multilayer process

IR:

infrared

LPE:

liquid phase epitaxy

MBE:

molecular beam epitaxy

MLHJ:

multilayer heterojunction

MOCVD:

metal-organic chemical vapor deposition

MOVPE:

metalorganic vapor phase epitaxy

MWIR:

medium-wavelength infrared

QA:

quench anneal

RDS:

reflection difference spectroscopy

RHEED:

reflection high-energy electron diffraction

RTD:

resistance temperature devices

SEM:

scanning electron microscope

SIMS:

secondary ion mass spectrometry

SSR:

solid-state recrystallisation

SWIR:

short-wavelength infrared

THM:

traveling heater method

TLHJ:

triple-layer graded heterojunction

UV:

ultraviolet

VB:

valence band

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Authors and Affiliations

  1. Materials Team Leader, SELEX Sensors and Airborne Systems Infrared Ltd., Millbrook Industrial Estate, PO Box 217, SO15 0EG, Southampton, Hampshire, UK

    Peter Capper Dr.

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  1. Department of Electrical Engineering, University of Saskatchewan, 57 Campus Drive, S7N 5A9, Saskatoon, SK, Canada

    Safa Kasap Prof.

  2. Materials Team Leader, SELEX Sensors and Airborne Systems Infrared Ltd., Millbrook Industrial Estate, PO Box 217, SO15 0EG, Southampton, Hampshire, UK

    Peter Capper Dr.

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Capper, P. (2006). Narrow-Bandgap II–VI Semiconductors: Growth. In: Kasap, S., Capper, P. (eds) Springer Handbook of Electronic and Photonic Materials. Springer Handbooks. Springer, Boston, MA. https://doi.org/10.1007/978-0-387-29185-7_15

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